description this precision optical perfor- mance oval led is specifically designed for full color/video and passenger information signs. the oval shaped radiation pattern and high luminous intensity ensure that this device is excellent for wide field of view outdoor applica- tions where a wide viewing angle and readability in sunlight are agilent hlmp-hd57 5 mm precision optical performance red oval led lamps data sheet features well defined spatial radiation pattern high brightness material red alingap 630 nm benefits viewing angle designed for wide field of view applications superior performance for outdoor environments applications full color signs commercial outdoor advertising essential. this lamp has very smooth, matched radiation pat- terns ensuring consistent color mixing in full color applications, message uniformity across the viewing angle of the sign. high efficiency led material is used in this lamp: aluminium indium gallium phosphide (alingap) for red color. the higher perfor- mance alingap ii is used.
2 package dimensions device selection guide color and luminous luminous dominant intensity intensity wavelength iv (mcd) at iv (mcd) at tinting part number d (nm) typ. 20 ma min. 20 ma max. type HLMP-HD57-NR000 red 630 590 2200 red notes: 1. the luminous intensity is measured on the mechanical axis of the lamp package. 2. the optical axis is closely aligned with the package mechanical axis. 3. the dominant wavelength, d , is derived from the chromaticity diagram and represents the color of the lamp. 5.20 (0.204) 10.85 ?0.50 (0.427 ?0.019) 2.54 (0.10) notes: 1. dimensions in millimeters (inches). 2. tolerance ?0.25 mm unless otherwise noted. 7.00 (0.275) 1.50 (0.059) max. 25.00 (0.984) min. 1.20 (0.047) 1.00 (0.039) min. 0.50 ?0.10 (0.019 ?0.003) cathode lead note: measured just above flange. 3.80 (0.150) part numbering system hlmp - x x xx - x x x xx mechanical options 00: bulk packaging dd: ammo pack color bin selections 0: no color bin limitation maximum intensity bin 0: no iv bin limitation minimum intensity bin refer to device selection guide color d: 630 nm red package h: 5 mm oval 40?x 100
3 absolute maximum ratings at t a = 25?c parameter value dc forward current [1] 50 ma peak pulsed forward current 100 ma average forward current 30 ma power dissipation 140 mw reverse voltage 5 v (i r = 100 a) led junction temperature 130?c operating temperature range ?0?c to +100?c storage temperature range ?0?c to +120?c wave soldering temperature 250?c for 3 secs note: 1. derate linearly as shown in figure 3. electrical/optical characteristics t a = 25?c parameter symbol min. typ. max. units test conditions forward voltage v f 2.2 2.4 v i f = 20 ma reverse voltage v r 520 i r = 100 a capacitance c 40 pf v f = 0, f = 1 mhz thermal resistance r j-pin 240 ?c/w led junction-to-cathode lead viewing angle major axis 2 1/2 100 deg minor axis 40 dominant wavelength d 630 nm i f = 20 ma peak wavelength p 639 nm peak of wavelength of spectral distribution at i f = 20 ma spectral halfwidth ? 1/2 17 nm wavelength width at spectral distribution power point at i f = 20 ma luminous efficacy v 155 lm/w emitted luminous power/ emitted radiant power notes: 1. 2 1/2 is the off-axis angle where the luminous intensity is 1/2 the on axis intensity. 2. the radiant intensity, ie in watts per steradian, may be found from the equation ie = iv/ v where iv is the luminous intensity in candelas and v is the luminous efficacy in lumens/watt.
4 figure 4. forward current vs. forward voltage. figure 5. spatial radiation pattern-minor axis. figure 6. spatial radiation pattern-major axis. intensity bin limits (mcd at 20 ma) bin name min. max. m 520 680 n 680 880 p 880 1150 q 1150 1500 r 1500 1900 tolerance will be 15% of these limits. note: 1. bin categories are established for classification of products. products may not be available in all bin categories. figure 1. relative intensity vs. wavelength. figure 2. relative luminous intensity vs. forward current. figure 3. forward current vs. ambient temperature. wavelength ?nm relative intensity 1.0 0.5 0 600 700 650 550 relative intensity (normalized at 20 ma) 0 0 forward current ma 20 40 2.0 1.0 50 0.5 1.5 2.5 30 10 0 40 20 i f forward current ma v f forward voltage v 0 3.0 1.5 2.0 2.5 10 30 50 1.0 0.5 relative intensity 1.0 0 angle degrees 0.5 -90 -50 -30 10 50 90 -10 30 -70 70 relative intensity 1.0 0 angle degrees 0.5 -90 -50 -30 10 50 90 -10 30 -70 70 i f forward current ma 0 0 t a ambient temperature c 40 80 50 40 30 20 10 20 60 100 r ja = 585 c/w r ja = 780 c/w
5 www.agilent.com/semiconductors for product information and a complete list of distributors, please go to our web site. for technical assistance call: americas/canada: +1 (800) 235-0312 or (916) 788-6763 europe: +49 (0) 6441 92460 china: 10800 650 0017 hong kong: (+65) 6756 2394 india, australia, new zealand: (+65) 6755 1939 japan: (+81 3) 3335-8152 (domestic/interna- tional), or 0120-61-1280 (domestic only) korea: (+65) 6755 1989 singapore, malaysia, vietnam, thailand, philippines, indonesia: (+65) 6755 2044 taiwan: (+65) 6755 1843 data subject to change. copyright ?2004 agilent technologies, inc. obsoletes 5988-4074en july 14, 2004 5988-7293en
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